Nitrate-sensitive field-effect transistor with silica gate insulator modified by chemical grafting
- 1 January 1992
- journal article
- Published by Elsevier in Analytica Chimica Acta
- Vol. 256 (2) , 251-255
- https://doi.org/10.1016/0003-2670(92)85351-6
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- An extended site-binding model and experimental results of organic membranes for reference ISFETsSensors and Actuators B: Chemical, 1990
- Analysis of the Response of Ion Sensing FETs with a Chemically Modified Gate InsulatorJournal of the Electrochemical Society, 1990
- Ionic detection using differential measurement between an ion-sensitive FET and a reference FETSensors and Actuators, 1989
- A novel urushi matrix sodium ion-selective field-effect transistorSensors and Actuators, 1989
- Monitoring nutrient film solutions using ion-selective electrodesJournal of Agricultural Engineering Research, 1988
- Ion-selective field-effect transitors (ISFETs)Philosophical Transactions of the Royal Society of London. B, Biological Sciences, 1987
- Monofunctional (Dimethylamino)silane as Silylating AgentHelvetica Chimica Acta, 1984
- A miniature flow-through cell with a four-function chemfet integrated circuit for simultaneous measurements of potassium, hydrogen, calcium and sodium ionsAnalytica Chimica Acta, 1984
- Gas chromatographic evidence for phase transitions in very compact octadecyl bonded silicasJournal of Chromatography A, 1980
- Basic properties of the electrolyte—SiO2—Si system: Physical and theoretical aspectsIEEE Transactions on Electron Devices, 1979