High resolution structural characterization of the amorphous-crystalline interface in Se+-implanted GaAs
- 1 May 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (9) , 874-876
- https://doi.org/10.1063/1.94963
Abstract
High-resolution transmission electron microscopy is applied to the characterization of the amorphous-crystalline interface in (100) GaAs implanted at room temperature with Se+. The critical density of energy deposited by nuclear stopping is determined to be 11+2 eV per GaAs molecule. This critical energy density is shown to be defined most naturally by a 50% amorphous-50% crystalline criterion. The amorphous-crystalline transition region was found to have a distinct two-phase nature. Both stacking fault nuclei and channeled damage cascades were detected in the as-implanted material.Keywords
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