Solid-state oxygen sensor using sputtered LaF3 film
- 30 April 1989
- journal article
- Published by Elsevier in Sensors and Actuators
- Vol. 16 (4) , 301-310
- https://doi.org/10.1016/0250-6874(89)85001-2
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 7 references indexed in Scilit:
- Potentiometric solid-state oxygen sensor using lanthanum fluoride operative at room temperatureSensors and Actuators, 1987
- Solid Electrolyte Oxygen Sensor Using LaF3 Sputtered Film Workable at Room TemperatureChemistry Letters, 1987
- A POTENTIOMETRIC OXYGEN SENSOR USING LaF3 SINGLE CRYSTAL OPERATIVE AT ROOM TEMPERATUREChemistry Letters, 1984
- Characteristics of an oxygen gauge at temperatures lower than 200°CSolid State Ionics, 1983
- Influence of oxygen on electrical properties of βPbF2 thin filmsSolid State Ionics, 1981
- The small-signal A.C. response of β-PbF2Solid State Ionics, 1981
- Utilization of a dilute solid electrolyte in an oxygen gaugeSolid State Ionics, 1980