dc and rf magnetron sputter deposition of NbN films with simultaneous control of the nitrogen consumption

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Abstract
To obtain high-quality NbN films with reproducible properties standard dc and rf magnetron sputter-deposition techniques were applied. As a sputtering gas a mixture of nitrogen and argon was used. The actual amount of nitrogen in the chamber is monitored by a differentially pumped mass spectrometer. The dependence of the nitrogen partial pressure on the amount of nitrogen injected into the chamber and the electrical power yields information about the target reaction with the nitrogen. In order to find the best preparation parameters, the interdependence between electrical sputtering power, nitrogen flow, nitrogen consumption, and the superconducting properties of the NbN films was investigated.