An Integrated SiGe-BiCMOS Low Noise Transmitter Chip with a Frequency Divider Chain for 77 GHz Applications
- 1 September 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper presents a low noise transmitter chip for a 77 GHz FMCW radar system being comprised of push-pull voltage controlled oscillator with an output buffer, a frequency divider chain and a peak-to-peak detector. The measurements show an output power of approximately 11 dBm at each of the two differential 50 Omega loads over a wide tuning range. The measured phase noise is about -85 dBc/Hz at 100 KHz offset frequency. The circuit has been implemented in a Freescale Semiconductor 0.18 mum SiGe-BiCMOS technology. SiGe-HBTs with a typical ft/fmax of 200GHz/205GHz are used as active devicesKeywords
This publication has 2 references indexed in Scilit:
- V-band and W-band SiGe bipolar low-noise amplifiers and voltage-controlled oscillatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- A 0.18 μm SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002