Dislocation velocities and electronic doping in silicon
- 1 October 1976
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (10) , 4318-4324
- https://doi.org/10.1063/1.322433
Abstract
Measurements of velocities of dislocations in silicon as a function of temperature and type of electronic impurity doping using Lang x‐ray topography are reported. Doping with n‐ and p‐type impurities results in an increase of the dislocation velocity and a decrease of the activation energy for both screw and 60° dislocations. The double kink nucleation and migration model of Gerk that takes kink motion to be limited by Auger electron‐hole recombination‐generation processes yields a satisfactory description of the experimental results.This publication has 26 references indexed in Scilit:
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