Analysis of picosecond and subpicosecond MSM photodiodes with very low bias voltage
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12) , 2433
- https://doi.org/10.1109/16.8841
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- IVB-4 vertical storage trench gated diode leakageIEEE Transactions on Electron Devices, 1987
- Parasitic leakage in DRAM trench storage capacitor vertical gated diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- The impact of gate-induced drain leakage current on MOSFET scalingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987