Novel class of low molecular-weight organic resists for nanometer lithography
- 21 October 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (17) , 2605-2607
- https://doi.org/10.1063/1.117714
Abstract
A novel class of low molecular-weight organic resist materials for nanometer lithography, 1,3,5-tris[4-(4-toluenesulfonyloxy)phenyl]benzene (TsOTPB) and 4,4′,4″-tris(allylsuccinimido) triphenylamine (ASITPA), was designed and synthesized. TsOTPB with a glass-transition temperature (Tg) of 64 °C and ASITPA with a Tg of 80 °C were found to function as positive and negative resists, respectively, enabling the fabrication of 150 and 70 nm line patterns on exposure to an electron beam at 50 keV.Keywords
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