Silicon interstitial generation by argon implantation
- 1 March 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (5) , 510-512
- https://doi.org/10.1063/1.95575
Abstract
In this letter we show that damaged layers in silicon created by argon implantation act as a source of silicon interstitials. This effect is shown to cause orders of magnitude increase in the diffusion coefficient of phosphorus at temperatures less than 800 °C. This creation of interstitials is shown to be long lasting. The value of this is discussed in understanding the role of point defects on dopant diffusion.Keywords
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