Realization of high-power operation in AlGaInP lasers by employing multiquantum barrier and strained active layer

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Abstract
CW output power in excess of 60 mW at 110 degree(s)C with a fundamental-transverse mode and stable CW operation over 3000 hrs under 30 mW at 60 degree(s)C have been realized by employing a multiquantum well (MQW) active layer with optimized compressive strain. A window-structure laser fabricated by solid phase diffusion of Zn has exhibited high-power CW operation over 150 mW keeping the fundamental-transverse-mode. Systematical approach to the high power operation has also been discussed.

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