Kinetic processes in molecular beam epitaxy of GaAs(100) and AlAs(100) examined via static and dynamic behavior of reflection high-energy electron-diffraction intensities
The nature of competing surface kinetic processes and their consequences for the growth mechanism in molecular beam epitaxy (MBE) of GaAs and AlAs on GaAs(100) As(2×4) surfaces is examined via measurements of the static and dynamic behavior of the specular beam intensity in reflection high-energy electron diffraction. A consistent, albeit qualitative, understanding is provided within the configuration-dependent reactive-incorporation model of MBE growth. The existence of certain growth conditions requiring a combination of only a single As4 pressure, substrate temperature, and growth rate and optimum for the customary practice of growth of interfacial structures without growth interruption, as well as with growth interruption, is demonstrated.