Equalisation of semiconductor diode laser frequency modulation with a passive network

25 April 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (9) , 361-362
https://doi.org/10.1049/el:19850257

Abstract

An equalisation network has been developed that improves the direct frequency modulation performance of GaAlAs semiconductor diode lasers. At modulation frequencies below 10 MHz, thermal modulation of the diode laser active region causes an enhanced frequency modulation response. A passive network has been developed which shapes the injection current modulation waveform to suppress the low-frequency enhancement.

Keywords

INJECTION CURRENT MODULATION WAVEFORM
EQUALISATION NETWORK
GAALAS
SEMICONDUCTOR DIODE LASER
FREQUENCY MODULATION
PASSIVE NETWORK
THERMAL MODULATION

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