Surface enhancement of the second harmonic generation on the GaAs-Al interface by the s-polarized fundamental wave

Abstract
The theoretical and experimental results demonstrate, for the first time, that the enhancement of the reflected surface second harmonic generation on the rough GaAs‐Al interface arises from the nonlinear resonant excitation of the harmonic surface polariton mode with s‐polarized incident radiation. The experimental results agree quite well with the theoretical analysis. An optimum surface second harmonic enhancement of ∼three orders of magnitude has been obtained.