MECHANISM OF THRESHOLD SWITCHING
- 15 April 1971
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (8) , 324-325
- https://doi.org/10.1063/1.1653680
Abstract
The paper describes pulse measurements on threshold switches based on thin layers (∼1μ) of multicomponent chalcogenide glasses. By means of voltage reversals prior to switching and monitoring of the corresponding switching delays, it has been demonstrated that switching in these systems is not essentially a thermal process. The switching delays depend on the polarity of applied preswitching bias voltages. The results provide further evidence for a space-charge mechanism, at any rate at low temperatures (e.g., −78°C to room temperature).Keywords
This publication has 3 references indexed in Scilit:
- SIMPLE TEST FOR DOUBLE INJECTION INITIATION OF SWITCHINGApplied Physics Letters, 1970
- A qualitative theory of electrical switching processes in monostable amorphous structuresJournal of Non-Crystalline Solids, 1970
- Amorphous-Semiconductor SwitchingScientific American, 1969