Characterization of interface defects in GaAs-GaAlAs superlattices
- 6 July 1987
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (1) , 27-29
- https://doi.org/10.1063/1.98875
Abstract
Capacitance transients in a 20‐20 Å GaAs‐Ga0.7 Al0.3As n‐type (3×1016 cm−3) Si‐doped superlattice have been performed. In the temperature range 50–100 K, a logarithmic time decay is observed. We attribute this time decay to the existence of a continuum of deep levels in the fundamental gap of the superlattice, related to electron traps located at the GaAs‐GaAlAs interfaces.Keywords
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