Annealing of indium-implanted CdTe
- 1 July 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (7) , 4793-4799
- https://doi.org/10.1063/1.331353
Abstract
The local environment of 111In implanted in CdTe has been studied by means of the perturbed angular correlation technique as a function of annealing conditions and temperatures. It is found that the damage correlated with the implantation process anneals at 200 °C. At 250–500 °C a new defect exists which is shown to be correlated with loss of Cd and can be inhibited when the escape of Cd can be suppressed. Outdiffusion of In starts at about 500 °C, and at 650 °C almost no In remains in the sample. These results agree with, and add to, published results on the annealing of In-implanted CdTe obtained by other techniques.This publication has 11 references indexed in Scilit:
- Radiation-induced defects and their annealing behavior in cadmium tellurideJournal of Applied Physics, 1980
- Intrinsic limitations of doping diamonds by heavy-ion implantationJournal of Applied Physics, 1979
- Current possibilities and limitations of cadmium telluride detectorsNuclear Instruments and Methods, 1978
- Annealing behavior of In implanted in Si studied by perturbed angular correlationJournal of Applied Physics, 1977
- The melt-growth and characterization of cadmium tellurideRevue de Physique Appliquée, 1977
- The defect structure of CdTeRevue de Physique Appliquée, 1977
- Photoluminescence in high-resistivity CdTe : InJournal of Applied Physics, 1975
- Optical absorption and lattice defects induced by neutron irradiation and heat treatment in ZnS crystalsPhysica Status Solidi (a), 1975
- Electrical activity and radiation damage in ion implanted cadmium tellurideRadiation Effects, 1974
- Thermal neutron-induced recoil defects inP-type cadmium tellurideRadiation Effects, 1970