Resist Possibilities And Limitations In Ion Beam Lithography
- 30 June 1982
- conference paper
- Published by SPIE-Intl Soc Optical Eng
- Vol. 333, 142-152
- https://doi.org/10.1117/12.933426
Abstract
A broad range of materials and processing techniques amenable to producing resist systems for ion beam lithography are discussed. The effect of random fluctuations in exposure dose on feature size for a gaussian beam of constant shape is calculated. The results of Monte Carlo simulations of exposures of PMMA on silicon by 50 KeV H2+, 100 KeV and and 150 KeV Li+ ions are presented and it is shown that feature resolution is fundamentally limited by the physical processes through which energy is deposited.Keywords
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