Analyses de couches minces de silice par emission ionique secondaire
- 31 December 1971
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 6 (12) , 1283-1296
- https://doi.org/10.1016/0025-5408(71)90127-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Analysis of Impurity Distribution in Homoepitaxial n on n+ Films of GaAs which Contain High-Resistivity RegionsJournal of Applied Physics, 1971
- Progress in analytic methods for the ion microprobe mass analyzerInternational Journal of Mass Spectrometry and Ion Physics, 1969
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965
- Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of SiliconJournal of Applied Physics, 1964
- Étude d’une méthode d’analyse locale chimique et isotopique utilisant l’émission ionique secondaireAnnales de Physique, 1964