Interdiffusion Phenomena Caused by Postannealing of ZnS:Mn Films in Thin-Film Electroluminescent Device
- 1 August 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (8R)
- https://doi.org/10.1143/jjap.27.1430
Abstract
In the electroluminescent device laminated with the following thin films, ITO/Sr(Zr0.2Ti0.8)O3/ZnS:Mn/Y2O3/Al2O3/Al, diffusions of In, Sr and Ti ions to the ZnS:Mn film were observed at high postannealing temperature of the ZnS:Mn films. We confirmed that an optimized annealing temperature needed to obtain the highest luminance was located at 450°C, where pronounced diffusions did not take place. The diffusion of the Ti ion into the ZnS:Mn film was considered to affect the performance of the EL device.Keywords
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