Dependence of Channel Hot-Electron Injection on MOSFET Structure
- 1 January 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (S1)
- https://doi.org/10.7567/jjaps.21s1.67
Abstract
The dependence of channel hot-electron injection upon MOSFET structures is reported. Hot-electron injection, which is a serious constraint for MOSFETs scaled down to the 1 µm level, is directly evaluated by measuring gate current to as low as the order of 10-15 A. The measured gate current is modeled numerically, based on a thermionic emission equation for heated electron gas. In order to minimize hot-electron injection, three device structures are proposed: a graded drain structure; an offset gate structure; and a buried channel structure. The proposed device structures improve the highest applicable voltage, as limited by hot-electron injection, by as much as 1–2 V.Keywords
This publication has 0 references indexed in Scilit: