A model of amorphous silicon deposition in DC glow discharge in silane

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Abstract
The structure of the cylindrical DC glow discharge in SiH4is presented by solving a basic set of equations, consisting of the electron, ion, gas molecule and radical continuity equations, and Poisson's equation. The electron swarm parameters are then obtained up to an E/N of 6*10-14V cm2from the analysis of the Boltzmann equation using the available cross-sectional information, and considering the local non-equilibrium at the cathode fall region. The spatial distribution of the radical is shown to have a maximum of 1012cm-3at the boundary between the sheath and plasma bulk. The production rate profile is also studied. The deposition rate of the radicals to the inner electrode is calculated from the diffusion flux of the radical molecule in space. The evaluated deposition rate of a-Si:H in the DC discharge in SiH4is consistent with previous experimental results within a factor of 0.5. The role of the negative ion and the influence of the non-equilibrium region in front of the cathode are also discussed.