SILICON (111) 7×7 STRUCTURE
- 1 May 1969
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (9) , 265-267
- https://doi.org/10.1063/1.1652806
Abstract
The Si(111) 7 × 7 structure has been observed within 9 sec of cleaving Si crystals at 850°C. Analysis shows that sufficient Fe to be regarded as essential for the structure cannot diffuse from the bulk in the time, although Li or Cu could. Sufficient contamination to form 1% of a monolayer could form by surface diffusion from the crystal sides, provided surface diffusion coefficients considerably greater than 5 × 10−5 cm2 sec−1 at 750°C were applicable.Keywords
This publication has 5 references indexed in Scilit:
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- Mathematical Treatment of Competitive Surface and Volume Diffusion ProcessesJournal of Applied Physics, 1964
- Structural Properties of Cleaved Silicon and Germanium SurfacesJournal of Applied Physics, 1963
- Low-Energy Electron Diffraction Study of Silicon Surface StructuresThe Journal of Chemical Physics, 1962
- Structure and Adsorption Characteristics of Clean Surfaces of Germanium and SiliconThe Journal of Chemical Physics, 1959