2 Gbit/s transimpedance amplifier fabricated by0.35 µmCMOS technologies
- 13 September 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (19) , 1158-1160
- https://doi.org/10.1049/el:20010797
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking designIEEE Journal of Solid-State Circuits, 1999
- A MODFET-based optoelectronic integrated circuit receiver for optical interconnectsIEEE Transactions on Electron Devices, 1993
- Monolithically integrated InP-based front-end photoreceiversIEEE Transactions on Electron Devices, 1991
- Broad-band GaAs monolithic equalizing amplifiers for multigigabit-per-second optical receiversIEEE Transactions on Microwave Theory and Techniques, 1990
- Fiber-optic multigigabit GaAs MIC front-end circuit with inductor peakingJournal of Lightwave Technology, 1988