Passivation of shallow impurities in Si by annealing in H2 at high temperature
- 21 October 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (17) , 2121-2123
- https://doi.org/10.1063/1.106099
Abstract
We have found by infrared absorption that shallow acceptors in Si can be passivated throughout the bulk of a semiconductor sample several mm thick by annealing in H2 at high temperature (≳900 °C) and quenching to room temperature. The total number of shallow centers passivated in such samples is comparable to the number in highly doped surface layers passivated in a hydrogen plasma at lower temperature (typically <400 °C). The importance of bulk passivation techniques is discussed.Keywords
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