The compensation and depletion behavior of iron doped GaAs grown by molecular beam epitaxy

• 23 September 1996
• journal article
• Published by AIP Publishing in Applied Physics Letters
• Vol. 69  (13) , 1885-1887
• https://doi.org/10.1063/1.117466

Abstract

Keywords

• ENERGY LEVELS
• GALLIUM ARSENIDE
• MOLECULAR BEAM EPITAXY
• IRON
• ELECTRIC CONDUCTIVITY