The Effect of Heat Treatment on the Minority Carrier Lifetime in Silicon
- 1 October 1961
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 16 (10) , 1923-1933
- https://doi.org/10.1143/jpsj.16.1923
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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- Surface properties of vacuum cleaned siliconJournal of Physics and Chemistry of Solids, 1960
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- Double-Acceptor Behavior of Zinc in SiliconPhysical Review B, 1957
- Thermal Generation of Recombination Centers in SiliconPhysical Review B, 1957
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955
- Switching Time in Junction Diodes and Junction TransistorsProceedings of the IRE, 1954
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952