Dislocation scattering in copper
- 1 November 1983
- journal article
- Published by IOP Publishing in Journal of Physics F: Metal Physics
- Vol. 13 (11) , L233-L238
- https://doi.org/10.1088/0305-4608/13/11/002
Abstract
De Haas-van Alphen (DHVA) measurements have been carried out in fatigued copper crystals with average dislocation densities of approximately 1011 cm-2. The signals are unexpectedly large because the long-range strain fields of the individual dislocations are suppressed by correlations in their spatial distribution. This emphasises that dislocation arrangement as well as density is important in the DHVA effect. If the results are interpreted in terms of scattering, the ratio of the total (DHVA) scattering rate to the momentum-weighted (resistive) scattering rate is about ten, only four times larger than for impurity scattering. This implies that the dislocation scattering mechanism important in resistivity is large angle.Keywords
This publication has 14 references indexed in Scilit:
- The interaction of conduction electrons with dislocations and grain boundaries in metalsCanadian Journal of Physics, 1982
- Correlation between electron-dislocation scattering and electron-impurity scattering in metalsJournal of Physics F: Metal Physics, 1981
- The temperature dependence of the saturation stress and dislocation substructure in fatigued copper single crystalsActa Metallurgica, 1980
- Electrical resistivity of dislocations in metalsJournal of Physics F: Metal Physics, 1977
- Resistivity change with deformation of high purity Cu crystals and its subsequent recoveryActa Metallurgica, 1977
- Vacancy dipoles in fatigued copperPhilosophical Magazine, 1976
- Weak-beam study of dislocation structures in fatigued copperPhilosophical Magazine, 1976
- de Haas-van Alphen effect study of dislocations in copperPhysical Review B, 1975
- The de Haas-van Alphen effect in dislocated crystals of copperPhilosophical Magazine, 1971
- RESISTIVITY OF DEFORMED CRYSTALSCanadian Journal of Physics, 1967