Position sensitive detectors made by ion implantation in silicon
- 1 March 1968
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 60 (1) , 24-26
- https://doi.org/10.1016/0029-554x(68)90084-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The fabrication of high quality silicon junction detectors by low energy ion implantationThe European Physical Journal A, 1967
- Junction Counters Produced by Irradiation of Silicon with Dopant IonsIEEE Transactions on Nuclear Science, 1966
- Grenzschichtzaehler fuer orts- und energiebestimmungNuclear Instruments and Methods, 1963
- Doping of Crystals by Ion Bombardment to Produce Solid State DetectorsReview of Scientific Instruments, 1962