A 1 V 0.9 mW at 100 MHz 2 k×16 b SRAM utilizing a half-swing pulsed-decoder and write-bus architecture in 0.25 μm dual-Vt CMOS
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- An asymptotically zero power charge-recycling bus architecture for battery-operated ultrahigh data rate ULSI'sIEEE Journal of Solid-State Circuits, 1995