Quantitative analysis of synchrotron radiation photoemission core level data
- 31 December 1989
- journal article
- Published by Elsevier in Journal of Electron Spectroscopy and Related Phenomena
- Vol. 49 (1) , 31-45
- https://doi.org/10.1016/0368-2048(89)80035-0
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Systematics of electronic structure and local bonding for metal/GaAs(110) interfacesJournal of Vacuum Science & Technology A, 1987
- Silicide formation at the Ti/Si(111) interface: Room-temperature reaction and Schottky-barrier formationPhysical Review B, 1987
- Photoemission study of Si(111)-Ge(5×5) surfacesPhysical Review B, 1986
- Quantitative model of reactive metal-semiconductor interface growth using high-resolution photoemission resultsPhysical Review B, 1986
- Initial oxidation of GaAs(110): A core-level photoemission studyPhysical Review B, 1984
- Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopyPhysical Review B, 1983
- Surface-atom x-ray photoemission from clean metals: Cu, Ag, and AuPhysical Review B, 1983
- Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)Physical Review Letters, 1980
- Atomic and electronic structure of semiconductor surfacesJournal of Vacuum Science and Technology, 1978
- High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of GoldPhysical Review B, 1972