Field-effect transistor based on organometallic Langmuir-Blodgett film
- 22 July 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (15) , 1377-1378
- https://doi.org/10.1049/el:19930922
Abstract
The fabrication of a thin film transistor based on a Langmuir-Blodgett film of an organo-metallic chargetransfer material, (N-octadecylpyridinium)-Ni(dmit)2 is reported. Saturation in the source-drain current is observed at large gate voltages. The charge carrier mobility is ̃ 0.2 cm2 V−1 s−1 after the organic layer has been doped with iodine.Keywords
This publication has 2 references indexed in Scilit:
- Highly-conducting Langmuir-Blodgett films based on Ni(dmit)2 anionsJournal of the Chemical Society, Chemical Communications, 1991
- Langmuir-Blodgett FilmsPublished by Springer Nature ,1990