Some aspects of Li behavior in ion implanted HgCdTe

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Abstract
SIMS has been used on both unimplanted and B-ion implanted LPE grown HgCdTe to study the distribution of the Li impurity background. In unimplanted layers Li decorates some types of crystal defects and also reflects the p/n distribution in the layer. In implanted layers Li decorates the implantation-induced damage and also reveals the junction region. Ion-implanted junctions have been evaluated by Hall, differential Hall, EBIC, C–V, and TEM techniques and the results correlated with the features exhibited by the Li distribution. The Li distribution analysis reinforces our previous understanding that implanted junctions are several microns deep, n+/p−, graded in the p region and formed by implant-induced native donors.

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