Electronic properties of the silicon-thermally grown tantalum oxide interface
- 1 May 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (5) , 527-529
- https://doi.org/10.1109/T-ED.1976.18444
Abstract
MOS capacitance measurements showed that the Si-Ta2O5interface prepared by thermal oxidation at ∼530°C of vacuum deposited Ta film followed by a heat treatment at 350°C in N2-H2is characterized by a negative "oxide" charge (6 × 1011e/cm-2at flat-band) and by an interface state density of ∼ 1 × 1012cm-2(eV)-1. The room temperature instability is small. The breakdown strength is >8 × 106V/cm.Keywords
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