Growth and Characterization of Eu : Y 2 O 3 Thin‐Film Phosphors on Silicon and Diamond‐Coated Silicon Substrates

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Abstract
Europium‐activated yttrium oxide phosphor films have been grown in situ on (100) bare silicon and diamond‐coated silicon substrates using a pulsed laser deposition technique. Diamond‐coated silicon substrates were prepared by hot filament chemical vapor deposition onto (100) silicon wafers. Measurements of photoluminescence and cathodoluminescence properties of films have shown that the films grown on diamond‐coated silicon substrates are brighter than the films grown on bare silicon substrates under identical deposition conditions. The improved brightness of the films on diamond‐coated silicon substrates is attributed to reduced internal reflection, low photon energy absorption by substrate, and enhanced scattering of incident beam with lattice. All these effects are primarily brought about by the presence of a rough diamond interfacial layer between the phosphor films and substrates.
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