Electronic properties in doped GaN studied by Raman scattering
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 672-676
- https://doi.org/10.1016/s0022-0248(98)00246-2
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
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- Effects of Configuration Interaction on Intensities and Phase ShiftsPhysical Review B, 1961