Depth profile analysis of ion‐implanted photoresist by infrared spectroscopy

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Abstract
Structural distribution at different depths in a novolac photoresist after boron ion implantation was analysed using infrared spectroscopy with gradient shaving preparations and spectral simulation techniques. The generation of graphite‐like structures and B–O and/or B–C bonding was observed only near the surface at approximately ∼0.1 µm for a sample that was ion implanted at 10 keV acceleration voltage and at ∼0.2 µm for a sample ion implanted at 100 keV. The main chemical change appears to be bond‐breaking (namely, the generation of voids) in inner films. In the process of mechanical shaving, the peel strength, degree of adhesion and shear strength were determined. Decreases in peel strength and degree of adhesion after ion implantation are thought to be primarily the result of bond‐breaking. The method described in this paper is effective for studying chemical bonding changes with depth and would be of help in understanding mechanical strength from the viewpoint of chemical bonding. Copyright © 2002 John Wiley & Sons, Ltd.