Negative electron affinity observed in boron-doped p-type diamond films by scanning field emission spectroscopy
- 15 December 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (12) , 6809-6812
- https://doi.org/10.1063/1.363809
Abstract
Field emission properties of boron‐doped diamond films were studied by combined scanning tunneling microscopy/spectroscopy and scanning field emission spectroscopy. A detailed spatial correlation between field emission sites and diamond morphology, surface work function, and diamond quality can be established by this technique. A possible indication of negative electron affinity of the (111) faces near the (111)/(111) and (111)/(100) grain boundaries and high defect sites of boron doped p‐type diamond films were observed by field emission I–V (current–voltage) measurement.This publication has 15 references indexed in Scilit:
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