Negative electron affinity observed in boron-doped p-type diamond films by scanning field emission spectroscopy

Abstract
Field emission properties of boron‐doped diamond films were studied by combined scanning tunneling microscopy/spectroscopy and scanning field emission spectroscopy. A detailed spatial correlation between field emission sites and diamond morphology, surface work function, and diamond quality can be established by this technique. A possible indication of negative electron affinity of the (111) faces near the (111)/(111) and (111)/(100) grain boundaries and high defect sites of boron doped p‐type diamond films were observed by field emission IV (current–voltage) measurement.

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