Reduction of unintentional aluminum spikes at SiC vapor phase epitaxial layer/substrate interfaces

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Abstract
Aluminum concentrations at unintentionally doped SiC vapor phase epitaxial layer/substrate interfaces were determined by secondary ion mass spectrometry to approach 1×1018 cm−3, exceeding the intentional doping of most device active layers. Capacitance–voltage measurements indicate that the aluminum is electrically active resulting in compensation of moderately doped n‐type layers. The unintentional aluminum buildup was successfully reduced by two orders of magnitude by minimizing exposure of the SiC substrate to propane gas prior to epitaxial growth and by the addition of an in situ HCl etch.

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