X-ray study of small dislocation loops in thermally oxidized silicon

• 1 August 1972
• journal article
• research article
• Published by International Union of Crystallography (IUCr) in Journal of Applied Crystallography
• Vol. 5  (4) , 281-285
• https://doi.org/10.1107/s0021889872009513

Abstract

Keywords

• TOPOGRAPHY
• LATTICE DEFECTS
• LOOPS AND HALF
• DISLOCATION
• DEFECT IMAGES
• SILICON
• DISPLACEMENT
• ETCH HILLOCKS