Far-infrared absorptivity of
- 15 September 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (8) , 5338-5352
- https://doi.org/10.1103/physrevb.38.5338
Abstract
The absorptivity of the heavy-fermion compound is measured from 2 to 1000 (0.25–124 meV) at temperatures between 1.2 K and room temperature. Above 50 (6.2 meV) the absorptivity is relatively temperature independent, while below that frequency the absorptivity is very temperature dependent, in accord with the dc resistivity. By performing a Kramers-Kronig transformation of the data, augmented with recently published results at higher frequencies, the complex conductivity is obtained. The low-temperature conductivity may be characterized by free carriers which undergo frequency-dependent scattering and have a concomitant frequency-dependent mass enhancement, λ(ω), with λ(0)=65. The data indicate a bare free-carrier plasma frequency of 2.1× (2.6 eV). Combining these results with the measured specific heat for gives for the low-frequency effective mass =240m, and for the optical band mass =3.7m. The carrier density is close to one electron per formula unit. The far-infrared absorptivity measurement indicates that the scattering rate begins to rise with an dependence, while the measured dc resistivity has a dependence at temperatures below 2 K. To account for the far-infrared data, the carrier scattering rate Γ(ω,T) can be written as Γ(ω,T)∼+(pπT, with an experimental upper limit of p=1. This is not consistent with electron-electron scattering, for which p=2.
Keywords
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