400-Å linewidth e-beam lithography on thick silicon substrates

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Abstract
Resist features as small as 200 Å and gold lines as narrow as 400 Å separated by 800‐Å center to center have been fabricated on thick silicon. substrates. A two‐layer electron‐sensitive resist structure is employed consisting of an upper layer of polymethyl‐methacrylate and a lower layer of a copolymer of methacrylic acid and methyl methacrylate. Use of the more electron‐sensitive lower layer results in an undercut which provides clean lift‐off of the evaporated gold. Degradation in the pattern resolution by electrons backscattered from the substrate is minimized by the presence of the lower resist layer. This method provides the finest resolution lift‐off patterns reported.

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