Disorder-induced buried-stripe optical waveguides in GaAs/AlGaAs MQW material

11 May 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (10) , 653-655
https://doi.org/10.1049/el:19890442

Abstract

Buried-stripe optical waveguides have been fabricated in GaAs/AlGaAs multiquantum-well material by masked Si⁺ implantation followed by annealing at 750°C to produce selective-area quantum well mixing. The waveguides were found to support both TE and TM modes with propagation losses of 33 and 56dBcm⁻¹, respectively, at a wavelength of 1.15µm.

Keywords

PROPAGATION LOSSES
1.15 MICRON
III-V SEMICONDUCTORS
FABRICATION
INTEGRATED OPTICS
GAAS-ALGAAS:SI
OPTICAL WAVEGUIDES
TM MODES
TE MODE
MULTIQUANTUM-WELL MATERIAL
SELECTIVE-AREA QUANTUM WELL MIXING
ANNEALING
MQW MATERIAL
BURIED-STRIPE
MASKED SI+ IMPLANTATION
750 DEGC

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