Laser alloying of Au-Ge ohmic contacts on GaAs

1 January 1979

proceedings article
Published by AIP Publishing in AIP Conference Proceedings

Vol. 50 (1) , 635-640
https://doi.org/10.1063/1.31730

Abstract

A ruby laser operating in the ’’free‐running’’ mode has been used to alloy Au‐Ge ohmic contacts on GaAs with morphologies superior to thermal alloys. A technique was developed which permitted the formation of low‐resistance ohmic contacts without damage to exposed GaAs. The structure of the alloyed contacts was studied by Auger depth profiling.

Keywords

ELECTRIC CONDUCTIVITY
MICROSTRUCTURES
CONTACT RESISTANCE
OHMIC CONTACT
GALLIUM ARSENIDE

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