Drain-structure design for reduced band-to-band and band-to-defect tunneling leakage

1 January 1990

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 69-70
https://doi.org/10.1109/vlsit.1990.111012

Abstract

The author investigates and models gate-induced drain leakage (GIDL) effects over a wide variety of drain structures, including n +-As/n--P combinations, n - implant doses (Nn-), and spacer lengths (Ls). An analytical model taking account of nm-order As doping modulation is proposed to explain the enhanced GIDL for n+-As FETs and the suppressed B-B tunneling with increasing Nn- for large-tilt-angle implanted-drain devices. Band-to-defect tunneling via interface states is also simulated and found to limit device performance, as well as hot-carrier reliability, much more severely than B-B tunneling. Based on the above understanding, drain-structure design is discussed in view of both performance and reliability

Keywords

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