Some Properties of p-n Junctions in GaP
- 1 October 1961
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 32 (10) , 2123-2127
- https://doi.org/10.1063/1.1777028
Abstract
A new method in making single crystals of GaP and the preparation of diodes is described. The p‐n luminescence and photoluminescence of undoped and Zn‐doped GaP are investigated and the light output of the p‐n luminescence as a function of temperature and excitation density is discussed. The spectral sensitivity of the p‐n photovoltaic effect is recorded.This publication has 7 references indexed in Scilit:
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