p-Ga0.2Al0.8As/p-Ga1-yAlyAs/n-Ga1-yAlyAs Solar Cells
- 1 January 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (S2) , 99
- https://doi.org/10.7567/jjaps.21s2.99
Abstract
Device performance of p-Ga0.2Al0.8As/p-Ga1-y Al y As/n-Ga1-y Al y As solar cell (Ga1-y Al y As solar cell) was studied theoretically and experimentally. Theoretical calculations show that the Ga1-y Al y ,As solar cell has (1) a higher AM 1 conversion efficiencies than the conventional p-(GaAl)As/p-GaAs/n-GaAs solar cell under sunlight concentration greater than 600 suns and (2) a superior performance in AM 0 condition. The Ga1-y Al y As solar cells were fabricated on GaAs wafers using the usual liquid phase epitaxy method. The observed characteristics measured under the simulated AMI insolation agree well with the predicted performance.Keywords
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