Optical Properties Of Tellurium Films Used For Data Recording

Abstract
The complex optical index of refraction for evaporated films of tellurium has been measured using ellipsometry over the wavelength range 439 to 633 nm. Values of n and k as a function of wavelength and as a function of thickness are presented. The transmittance and reflectance of single layers of tellurium, as well as multilayer structures to be used for optical data recording media, are shown as a function of wavelength. Oxide formation of these films has also been measured, and a model for the role of oxides in altering adhesion of the films is presented.

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