The Effect of Heat Treatment on the Breakdown Characteristics of Silicon pn Junctions
- 1 November 1958
- journal article
- electronics section
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 5 (5) , 405-416
- https://doi.org/10.1080/00207215808953931
Abstract
Silicon pn junctions have been studied winch exhibit soft breakdown in the reverse characteristic and experiments are described which show that this can be caused not only by surface conditions, but also by unsuitable bulk properties resulting from heat, treatment, of the silicon. An explanation for this effect is suggested.Keywords
This publication has 4 references indexed in Scilit:
- On the Impact Ionization in the Space-Charge Region of p–n Junctions †Journal of Electronics and Control, 1957
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Influence of Electric Field in Diffusion Region upon Breakdown in Germanium n-p JunctionsJournal of Applied Physics, 1957
- A theory of the electrical breakdown of solid dielectricsProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1934