Effect of Disorder on the Conduction-Band Effective Mass, Valence-Band Spin-Orbit Splitting, and the Direct Band Gap in III-V Alloys
- 15 October 1973
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 8 (8) , 3794-3798
- https://doi.org/10.1103/physrevb.8.3794
Abstract
The conduction-band effective mass in small-band-gap III-V alloys has been observed to be heavier than would be expected from a standard calculation in the virtual-crystal approximation. Here we analyze the effect of disorder-induced valence-conduction band mixing on this effective mass. It is found that with a consistent set of assumptions for interband and intraband mixing, one can account for the variation of the band gap, the spin-orbit splitting, and the conduction-band mass in these alloys.
Keywords
This publication has 28 references indexed in Scilit:
- Electroreflectance and Band Structure ofAlloysPhysical Review B, 1972
- Compositional dependence of effective masses in n-type GaxIn1−xAs alloys using submillimeter cyclotron resonanceSolid State Communications, 1972
- Thermoreflectance studies of thin epitaxially deposited (InGa)P alloysJournal of Physics C: Solid State Physics, 1971
- Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy GapsJournal of Applied Physics, 1969
- Electroreflectance Studies of InAs, GaAs, and (Ga,In) As AlloysPhysical Review B, 1968
- Free-carrier Faraday rotation in InAsxSb1−x alloysCanadian Journal of Physics, 1968
- Electroreflectance in the GaAs-GaP AlloysPhysical Review B, 1966
- Energy Levels of a Crystal Modified by Alloying or by PressurePhysical Review B, 1955
- Energy Levels of a Disordered AlloyPhysical Review B, 1955
- Zur Elektronentheorie der Metalle. IAnnalen der Physik, 1931