Large-signal amplification with avalanche devices
- 1 March 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 55 (3) , 464-465
- https://doi.org/10.1109/PROC.1967.5551
Abstract
Experimental results on large-signal amplification obtained from epitaxial silicon p-n junctions biased into avalanche are described. It was found that the diodes under investigation are capable of delivering stable power outputs of 30 to 40 mW CW with 10 to 15-dB power gain. The output equals approximately that of an oscillating device under the same dc operating conditions.Keywords
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